Infrared spectroscopy of hydrogen in ZnO

被引：181

作者：

McCluskey, MD ^{[1
]}

Jokela, SJ

Zhuravlev, KK

Simpson, PJ

Lynn, KG

机构：

[1] Washington State Univ, Dept Phys, Pullman, WA 99164 USA

[2] Washington State Univ, Inst Shock Phys, Pullman, WA 99164 USA

[3] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada

[4] Washington State Univ, Ctr Mat Res, Pullman, WA 99164 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 20期

关键词：

D O I：

10.1063/1.1520703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zinc oxide (ZnO) is a wide-band gap semiconductor that has attracted tremendous interest for optical, electronic, and mechanical applications. First-principles calculations by [C. G. Van de Walle, Phys. Rev. Lett. 85, 1012 (2000)] have predicted that hydrogen impurities in ZnO are shallow donors. In order to determine the microscopic structure of hydrogen donors, we have used IR spectroscopy to measure local vibrational modes in ZnO annealed in hydrogen gas. An oxygen-hydrogen stretch mode is observed at 3326.3 cm(-1) at a temperature of 8 K, in good agreement with the theoretical predictions for hydrogen in an antibonding configuration. The results of this study suggest that hydrogen annealing may be a practical method for controlled n-type doping of ZnO. (C) 2002 American Institute of Physics.

引用

页码：3807 / 3809

页数：3

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