A review of electrical characterization techniques for ultrathin FDSOI materials and devices

被引：45

作者：

Cristoloveanu, Sorin ^{[1
]}

Bawedin, Maryline ^{[1
]}

Ionica, Irina ^{[1
]}

机构：

[1] Univ Grenoble Alpes, IMEP LAHC, Minatec, Grenoble INP,CNRS,UMR 5130, F-38016 Grenoble, France

来源：

SOLID-STATE ELECTRONICS | 2016年 / 117卷

关键词：

Characterization; SOI; Size effects; Ultrathin films; Pseudo-MOSFET; Parameter extraction; SILICON-ON-INSULATOR; LOW-FREQUENCY NOISE; DEPLETED SOI MOSFETS; CARRIER LIFETIME EXTRACTION; C-V MEASUREMENTS; PSEUDO-MOSFET; THRESHOLD VOLTAGE; PARAMETER EXTRACTION; NUMERICAL-SIMULATION; MOBILITY EXTRACTION;

D O I：

10.1016/j.sse.2015.11.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characterization of nanosize SOI materials and devices is challenging because multiple oxides, interfaces and channels coexist. Conventional measurement methods need to be replaced, or at least updated. We review the routine techniques that proved efficient for the evaluation of bare SOI wafers (essentially the pseudo-MOSFET) and of MOS structures (transistors and gated diodes). Informative examples are selected to illustrate the typical properties of advanced SOI wafers and MOSFETs. We will show how the ultrathin film and short-channel effects affect the interpretation of the experimental data. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：10 / 36

页数：27