Formation of carbon nanowires by annealing silicon carbide films deposited by magnetron sputtering

被引：0

作者：

An, X ^{[1
]}

Zhuang, HZ ^{[1
]}

Yang, L ^{[1
]}

Xue, CS ^{[1
]}

机构：

[1] Shandong Normal Univ, Inst Semicond, Shandong 250014, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2002年 / 193卷 / 1-4期

关键词：

magnetron sputtering technique; silicon carbide; carbon nanowire; thin films;

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The silicon carbide films were grown on a Si(1 1 1) substrate by radio frequency (RF) magnetron sputtering at room temperature. Carbon nanowires were obtained after annealing at 1150degreesC for 3 h in a H-2 atmosphere, Fourier transform infrared transmission spectroscopy (FTIR), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) were employed to analyze the structure, composition and surface morphology of the films. The results confirmed the formation of carbon nanowires. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：87 / 91

页数：5

共 16 条

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