High-Order Input-Reflectionless Quasi-Elliptic-Type Wideband Bandpass Filter Using Dual-Mode Slotline Resonator

被引:0
作者
Yang, Li [1 ]
Psychogiou, Dmitra [2 ]
Gomez-Garcia, Roberto [1 ]
机构
[1] Univ Alcala, Dept Signal Theory & Commun, Madrid 28871, Spain
[2] Univ Coll Cork, Sch Engn, Cork T12 K8AF, Ireland
来源
2022 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2022年
关键词
Absorptive filter; bandpass filter (BPF); two-layer structure; reflectionles filter; wideband filter;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A high-order input-reflectionless quasi-elliptic-type wideband bandpass filter (BPF) that exploits a complementary-diplexer-based topology is reported. Firstly, a fourth-order wideband microstrip-to-microstrip vertical transition employing a dual-mode slotline resonator as the reflective-type BPF channel is designed. It features a sharp-rejection BPF response with two close-to-passband transmission zeros (TZs). To attain broadband input-reflectionless behavior, a shunt resistively-terminated microstrip pi-shape network is used as the absorptive bandstop-filter (BSF) channel. The RF theoretical operational principle of the conceived broadband BPF is detailed. Compared to prior-art high-order input-/two-port-reflectionless wideband BPFs, the proposed BPF features not only improved passband flatness at the passband edges, but also relatively-high stopband power-attenuation levels and power-absorption ratios. For experimental-validation purposes, a two-layer fourth-order BPF microstrip prototype centered at 1 GHz is developed and tested.
引用
收藏
页码:455 / 457
页数:3
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