Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods

被引：94

作者：

O'Connor, E. ^{[1
]}

Monaghan, S. ^{[1
]}

Long, R. D. ^{[1
]}

O'Mahony, A. ^{[1
]}

Povey, I. M. ^{[1
]}

Cherkaoui, K. ^{[1
]}

Pemble, M. E. ^{[1
]}

Brammertz, G. ^{[2
]}

Heyns, M. ^{[2
]}

Newcomb, S. B. ^{[3
]}

Afanas'ev, V. V. ^{[4
]}

Hurley, P. K. ^{[1
]}

机构：

[1] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

[2] IMEC, Interuniv Microelect Ctr, B-3001 Louvain, Belgium

[3] Glebe Sci Ltd, Newport, Cty Tipperary, Ireland

[4] Catholic Univ Louvain, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 10期

基金：

爱尔兰科学基金会;

关键词：

annealing; atomic layer epitaxial growth; gallium arsenide; hafnium compounds; III-V semiconductors; indium compounds; MIS structures; MOS capacitors; palladium; passivation; semiconductor epitaxial layers; semiconductor growth; SILICON; DEVICES;

D O I：

10.1063/1.3089688

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical properties of metal-oxide-semiconductor capacitors using atomic layer deposited HfO2 on n-type GaAs or InxGa1-xAs (x=0.53, 0.30, 0.15) epitaxial layers were investigated. Capacitance-voltage (CV) measurements indicated large temperature and frequency dispersion at positive gate bias in devices using n-type GaAs and low In content (x=0.30, 0.15) InxGa1-xAs layers, which is significantly reduced for devices using In0.53Ga0.47As. For In0.53Ga0.47As devices, the CV response at negative gate bias is most likely characteristic of an interface state response and may not be indicative of true inversion. The conductance technique on Pd/HfO2/In0.53Ga0.47As/InP shows reductions in interface state densities by In0.53Ga0.47As surface passivation and forming gas annealing (325 degrees C).

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页数：3

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