Excited states in hydrogenated single-layer MoS2

被引:0
|
作者
Din, Naseem Ud [1 ]
Turkowski, Volodymyr [1 ]
Rahman, Talat S. [1 ]
机构
[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA
基金
美国能源部;
关键词
excitation spectrum; optical properties; excitons; absorption and emission spectrum; TRANSITION-METAL DICHALCOGENIDES; ELECTRONIC-PROPERTIES; MONOLAYER; ADSORPTION; POTASSIUM;
D O I
10.1088/1361-648X/abc971
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Our calculations of the excitation spectrum of single-layer MoS2 at several hydrogen coverages, using a density-matrix based time-dependent density-functional theory (TDDFT) show that the fully hydrogenated system is metallic, while at lower coverages the spectrum consists of spin-polarized partially filled localized mid-gap states. The calculated absorption spectrum of the system reveals standard excitonic peaks corresponding to the bound valence-band hole and conduction-band electron, as well as excitonic peaks that involve the mid-gap states. Binding energies of the excitons of the hydrogenated system are found to be relatively large (few tens of meV), making their experimental detection facile and suggesting hydrogenation as a knob for tuning the optical properties of single-layer MoS2. Importantly, we find hydrogenation to suppress visible light photoluminescence, in agreement with experimental observations. In contrast, both Li and Na atoms transform the system into an n-doped non-magnetic semiconductor that does not allow excitonic states.
引用
收藏
页数:9
相关论文
共 50 条
  • [41] Bandgap broadening at grain boundaries in single-layer MoS2
    Wang, Dongfei
    Yu, Hua
    Tao, Lei
    Xiao, Wende
    Fan, Peng
    Zhang, Tingting
    Liao, Mengzhou
    Guo, Wei
    Shi, Dongxia
    Du, Shixuan
    Zhang, Guangyu
    Gao, Hongjun
    NANO RESEARCH, 2018, 11 (11) : 6102 - 6109
  • [42] DNA Base Detection Using a Single-Layer MoS2
    Farimani, Amir Barati
    Min, Kyoungmin
    Aluru, Narayana R.
    ACS NANO, 2014, 8 (08) : 7914 - 7922
  • [43] The Effect of Substrate on Vibrational Properties of Single-Layer MoS2
    Golasa, K.
    Molas, M. R.
    Nogajewski, K.
    Grzeszczyk, M.
    Zinkiewicz, M.
    Potemski, M.
    Babinski, A.
    ACTA PHYSICA POLONICA A, 2016, 130 (05) : 1172 - 1175
  • [44] Coherent Atomic and Electronic Heterostructures of Single-Layer MoS2
    Eda, Goki
    Fujita, Takeshi
    Yamaguchi, Hisato
    Voiry, Damien
    Chen, Mingwei
    Chhowalla, Manish
    ACS NANO, 2012, 6 (08) : 7311 - 7317
  • [45] Strongly Coupled Coherent Phonons in Single-Layer MoS2
    Trovatello, Chiara
    Miranda, Henrique P. C.
    Molina-Sanchez, Alejandro
    Borrego-Varillas, Rocio
    Manzoni, Cristian
    Moretti, Luca
    Ganzer, Lucia
    Maiuri, Margherita
    Wang, Junjia
    Dumcenco, Dumitru
    Kis, Andras
    Wirtz, Ludger
    Marini, Andrea
    Soavi, Giancarlo
    Ferrari, Andrea C.
    Cerullo, Giulio
    Sangalli, Davide
    Dal Conte, Stefano
    ACS NANO, 2020, 14 (05) : 5700 - 5710
  • [46] Toward the Growth of an Aligned Single-Layer MoS2 Film
    Kim, Daeho
    Sun, Dezheng
    Lu, Wenhao
    Cheng, Zhihai
    Zhu, Yeming
    Le, Duy
    Rahman, Talat S.
    Bartels, Ludwig
    LANGMUIR, 2011, 27 (18) : 11650 - 11653
  • [47] Dielectric Screening of Excitons and Trions in Single-Layer MoS2
    Lin, Yuxuan
    Ling, Xi
    Yu, Lili
    Huang, Shengxi
    Hsu, Allen L.
    Lee, Yi-Hsien
    Kong, Jing
    Dressehaus, Mildred S.
    Palacios, Tomas
    NANO LETTERS, 2014, 14 (10) : 5569 - 5576
  • [48] Strain induced mobility modulation in single-layer MoS2
    Hosseini, Manouchehr
    Elahi, Mohammad
    Pourfath, Mahdi
    Esseni, David
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (37)
  • [49] Electric field modulation of thermovoltage in single-layer MoS2
    Dobusch, Lukas
    Furchi, Marco M.
    Pospischil, Andreas
    Mueller, Thomas
    Bertagnolli, Emmerich
    Lugstein, Alois
    APPLIED PHYSICS LETTERS, 2014, 105 (25)
  • [50] Ballistic transport in single-layer MoS2 piezotronic transistors
    Huang, Xin
    Liu, Wei
    Zhang, Aihua
    Zhang, Yan
    Wang, Zhonglin
    NANO RESEARCH, 2016, 9 (02) : 282 - 290