Infrared Sensing With Self-Supporting YBCO Uncooled IR Microbolometer Array Integrated With On-Chip CCBDI Readout Circuit

被引:6
作者
Kumar, Sandeep [1 ]
Butler, Donald P. [1 ]
机构
[1] Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA
关键词
Infrared; microbolometer; readout integrated circuit; yttrium barium copper oxide (YBCO); THIN-FILMS; SENSITIVITY;
D O I
10.1109/JSEN.2009.2014404
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the integration and characterization of self-supporting yttrium barium copper oxide (YBCO) microbolometer arrays (pixel size of 31 X 31 mu m(2)) with on-chip constant current buffered direct injection (CCBDI) readout circuit in AMI Semiconductor 1.5 mu m double-poly-double-metal n-well 2.5 V complementary metal-oxide-semiconductor (CMOS) technology. The uncooled semiconducting YBCO microbolometer array was fabricated using two different electrode arm geometries to achieve either a traditional 30 Hz frame rate and a higher frame rate of 200 Hz. The CCBDI readout circuit was designed to work both with the traditional frame rate of 30 Hz, as well as a higher frame rate of 200 Hz when extrapolated to a 640 480 array for faster thermal imaging in commercial, military and biomedical applications. The CCBDI readout circuit offers advantages of high linearity and uniformity, low offset error and provides maximum sensitivity at a bias current. The CCBDI readout has a great potential due to higher injection efficiency of the CCBDI amplifier and the stable microbolometer bias control. The measured value of thermal conductance is 1.01 x 10(-7) W/K for the 30 Hz frame rate electrode arm geometry. The maximum responsivity of 1.62 x 10(5) V/W and maximum detectivity of 3.51 x 10(7) cmHz(1/2) /W were measured for a single YBCO microbolometer pixel from the 4 x 4 array with CCBDI readout circuit and a 200 Hz frame rate electrode arm geometry. The maximum responsivity of 1.24 x 10(5) V/W and maximum detectivity of 1.98 x 10(7) cmHz(1/2) /W were measured of a single YBCO microbolometer pixel from the 4 x 4 array with CCBDI readout circuit and a 30 Hz frame rate electrode arm geometry.
引用
收藏
页码:411 / 418
页数:8
相关论文
共 14 条
[1]   Self-supporting uncooled infrared microbolometers with low-thermal mass [J].
Almasri, M ;
Butler, DP ;
Çelik-Butler, Z .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2001, 10 (03) :469-476
[2]   Monolithic two-dimensional arrays of micromachined microstructures for infrared applications [J].
Cole, BE ;
Higashi, RE ;
Wood, RA .
PROCEEDINGS OF THE IEEE, 1998, 86 (08) :1679-1686
[3]  
Dereniak E., 1996, INFRARED DETECTORS S
[4]   A low-cost 128x128 uncooled infrared detector array in CMOS process [J].
Eminoglu, Selim ;
Tanrikulu, Mahmud Yusuf ;
Akin, Tayfun .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2008, 17 (01) :20-30
[5]  
González-Vidal JL, 2006, REV MEX FIS, V52, P6
[6]   Focal-plane-arrays and CMOS readout techniques of infrared imaging systems [J].
Hsieh, CC ;
Wu, CY ;
Jih, FW ;
Sun, TP .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS FOR VIDEO TECHNOLOGY, 1997, 7 (04) :594-605
[7]  
JOHNS LS, 1994, P SOC PHOTO-OPT INS, V2269, P2, DOI 10.1117/12.188624
[8]   Fabrication of complementary metal-oxide-semiconductor compatible semiconducting yttrium barium copper oxide uncooled infrared microbolometer arrays [J].
Kumar, Sandeep ;
Chitteboyina, Murali M. ;
Butler, Donald P. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (04) :1315-1320
[9]   Micromachined bolometer with single-crystal silicon diode as temperature sensor [J].
Neuzil, P ;
Liu, Y ;
Feng, HH ;
Zeng, WJ .
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (05) :320-322
[10]   Semiconducting YBaCuO thin films for uncooled infrared bolometers [J].
Shan, PC ;
CelikButler, Z ;
Butler, DP ;
Jahanzeb, A .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (12) :7334-7339