Electronic and transport properties of n-type monolayer black phosphorus at low temperatures

被引:17
作者
Han, F. W. [1 ,2 ]
Xu, W. [1 ,2 ,3 ,4 ]
Li, L. L. [1 ]
Zhang, C. [1 ]
Dong, H. M. [5 ]
Peeters, F. M. [6 ]
机构
[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
[2] Univ Sci & Technol China, Hefei 230026, Peoples R China
[3] Yunnan Univ, Dept Phys & Astron, Kunming 650091, Peoples R China
[4] Yunnan Univ, Yunnan Key Lab Micro Nano Mat & Technol, Kunming 650091, Peoples R China
[5] China Univ Min & Technol, Sch Phys, Xuzhou 221116, Peoples R China
[6] Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
基金
中国国家自然科学基金;
关键词
FIELD-EFFECT TRANSISTORS; MOBILITY; GAS;
D O I
10.1103/PhysRevB.95.115436
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a detailed theoretical study of the electronic and transport properties of monolayer black phosphorus (BP). This study is motivated by recent experimental activities in investigating n-type few-layer BP systems. The electron density of states, the screening length, and the low-temperature electron mobility are calculated for monolayer BP (MLBP). In particular, the electron transport mobilities along the armchair and zigzag directions are examined on the basis of the momentum-balance equation derived from a semiclassical Boltzmann equation. The anisotropic electron mobilities in MLBP along different directions are demonstrated where the electron-impurity scattering is considered. Furthermore, we compare the results obtained from two electronic band structures of MLBP and find that the simplified model can describe quite rightly the electronic and transport properties of MLBP. This study is relevant to the application of few-layer BP based electronic systems as advanced electronic devices.
引用
收藏
页数:8
相关论文
共 31 条
[1]   Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating [J].
Buscema, Michele ;
Groenendijk, Dirk J. ;
Steele, Gary A. ;
van der Zant, Herre S. J. ;
Castellanos-Gomez, Andres .
NATURE COMMUNICATIONS, 2014, 5
[2]   Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors [J].
Buscema, Michele ;
Groenendijk, Dirk J. ;
Blanter, Sofya I. ;
Steele, Gary A. ;
van der Zant, Herre S. J. ;
Castellanos-Gomez, Andres .
NANO LETTERS, 2014, 14 (06) :3347-3352
[3]   Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction p-n Diode [J].
Deng, Yexin ;
Luo, Zhe ;
Conrad, Nathan J. ;
Liu, Han ;
Gong, Yongji ;
Najmaei, Sina ;
Ajayan, Pulickel M. ;
Lou, Jun ;
Xu, Xianfan ;
Ye, Peide D. .
ACS NANO, 2014, 8 (08) :8292-8299
[4]   Transport properties of ultrathin black phosphorus on hexagonal boron nitride [J].
Doganov, Rostislav A. ;
Koenig, Steven P. ;
Yeo, Yuting ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Oezyilmaz, Barbaros .
APPLIED PHYSICS LETTERS, 2015, 106 (08)
[5]   Quantum and transport conductivities in monolayer graphene [J].
Dong, H. M. ;
Xu, W. ;
Zeng, Z. ;
Lu, T. C. ;
Peeters, F. M. .
PHYSICAL REVIEW B, 2008, 77 (23)
[6]   Black Phosphorus Photodetector for Multispectral, High-Resolution Imaging [J].
Engel, Michael ;
Steiner, Mathias ;
Avouris, Phaedon .
NANO LETTERS, 2014, 14 (11) :6414-6417
[7]   Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus [J].
Fei, Ruixiang ;
Yang, Li .
NANO LETTERS, 2014, 14 (05) :2884-2889
[8]   Thermoelectric power of bulk black-phosphorus [J].
Flores, E. ;
Ares, J. R. ;
Castellanos-Gomez, A. ;
Barawi, M. ;
Ferrer, I. J. ;
Sanchez, C. .
APPLIED PHYSICS LETTERS, 2015, 106 (02)
[9]   Electronic structure of black phosphorus studied by angle-resolved photoemission spectroscopy [J].
Han, C. Q. ;
Yao, M. Y. ;
Bai, X. X. ;
Miao, Lin ;
Zhu, Fengfeng ;
Guan, D. D. ;
Wang, Shun ;
Gao, C. L. ;
Liu, Canhua ;
Qian, Dong ;
Liu, Y. ;
Jia, Jin-feng .
PHYSICAL REVIEW B, 2014, 90 (08)
[10]   Strongly anisotropic in-plane thermal transport in single-layer black phosphorene [J].
Jain, Ankit ;
McGaughey, Alan J. H. .
SCIENTIFIC REPORTS, 2015, 5