Temperature behavior of damage in sapphire implanted with light ions

被引：4
作者：
Alves, E. [1 ,2 ]
Marques, C. [1 ,2 ]
Safran, G. [4 ]
McHargue, Carl J. [3 ]
机构：
[1] Univ Lisbon, Ctr Fis Nucl, P-1699 Lisbon, Portugal
[2] Inst Tecnol & Nucl, Ion Beam Lab, P-2686953 Sacavem, Portugal
[3] Univ Tennessee, Knoxville, TN 37996 USA
[4] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2009年 / 267卷 / 8-9期
关键词：
Sapphire; Ion implantation; Defect structures; ROOM-TEMPERATURE; AL2O3;
D O I：
10.1016/j.nimb.2009.01.089
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In this study, we compare and discuss the defect behavior of sapphire single crystals implanted with different fluences (1 x 10(16)-1 x 10(17) cm(-2)) of carbon and nitrogen with 150 keV. The implantation temperatures were RT, 500 degrees C and 1000 degrees C to study the influence of temperature on the defect structures. For all the ions the Rutherford backscattering-channeling (RBS-C) results indicate a surface region with low residual disorder in the Al-sublattice. Near the end of range the channeled spectrum almost reaches the random indicating a high damage level for fluences of 1 x 10(17) cm(-2). The transmission electron microscopy (TEM) photographs show a layered contrast feature for the C implanted sample where a buried amorphous region is present. For the N implanted sample the Electron Energy Loss Spectroscopy (EELS) elemental mapping give evidence for the presence of a buried damage layer decorated with bubbles. Samples implanted at high temperatures (500 degrees C and 1000 degrees C) show a strong contrast fluctuation indicating a defective crystalline structure of sapphire. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1464 / 1467
页数：4
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