Spin-dependent tunneling in nanostructures consisting of magnetic barriers

被引:20
|
作者
Lu, MW
Zhang, LD
Jin, YX
Yan, XH
机构
[1] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
[2] Xiangtan Univ, Dept Phys, Xiangtan 411105, Hunan, Peoples R China
来源
EUROPEAN PHYSICAL JOURNAL B | 2002年 / 27卷 / 04期
关键词
D O I
10.1140/epjb/e2002-00190-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We study the spin-dependent transport properties of the nanostructures consisting of realistic magnetic barriers produced by the deposition of ferromagnetic stripes on heterostructures. It is shown that, only in the nanostructures with symmetric magnetic field with respect to the magnetic-modulation direction, electrons exhibit a considerable spin-polarization. It is also shown that the degree of the electron spin polarization is greatly dependent on the ferromagnetic stripe and its position relative to the 2DEG. A much larger electron-spin polarization can be obtained by properly fabricating the ferromagnetic stripe and by adjusting its distance above the 2DEG.
引用
收藏
页码:565 / 570
页数:6
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