Effects of process parameters on the optical constants of highly textured V2O5 thin films

被引:7
作者
Atuchin, V. V. [1 ,2 ,3 ]
Kochubey, V. A. [1 ]
Pokrovsky, L. D. [1 ]
Kruchinin, V. N. [4 ]
Ramana, C. V. [5 ]
机构
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Lab Opt Mat & Struct, Novosibirsk 630090, Russia
[2] Tomsk State Univ, Funct Elect Lab, Tomsk 634050, Russia
[3] Novosibirsk State Univ, Lab Semicond & Dielect Mat, Novosibirsk 630090, Russia
[4] Russian Acad Sci, Inst Semicond Phys, Lab Ellipsometry Semicond Mat & Struct, Novosibirsk 630090, Russia
[5] Univ Texas El Paso, Dept Mech Engn, El Paso, TX 79968 USA
关键词
PULSED-LASER DEPOSITION; VANADIUM PENTOXIDE; LI INTERCALATION; MICROSTRUCTURE; ELLIPSOMETRY; GROWTH;
D O I
10.1134/S0030400X14090033
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The optical properties of the highly-textured V2O5 thin-films grown on Si(100) by sputter-deposition at various oxygen reactive-pressures were investigated in detail. The profiles of the optical constants, namely the refractive index and extinction coefficient, of V2O5 films were evaluated in the photon-energy range of 1-5 eV. At photon-energy above 2.5 eV, the dispersion behavior in optical constants is explained based on Lorentz-Drude model. The refractive index dispersion fits to a Cauchy's relation at photon-energy below 2.5 eV, where the V2O5-film is mostly transparent. The optical transitions across the bandgap occur at energy similar to 2.5-3.2 eV depending on the V2O5 growth conditions and film-microstructure. The highly-textured and c-axis oriented V2O5-films, fabricated under optimum conditions of temperature and oxygen partial pressure, exhibit excellent optical characteristics similar to V2O5 single crystals.
引用
收藏
页码:423 / 427
页数:5
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