CVD Growth of MoS2-based Two-dimensional Materials

被引:177
作者
Liu, H. F. [1 ]
Wong, S. L. [1 ]
Chi, D. Z. [1 ]
机构
[1] Agcy Sci Technol & Res, Inst Mat Res & Engn, 2 Fusionopolis Way,Innovis 08-03, Singapore 138634, Singapore
关键词
MoS2 atomic layers; Thermal vapor depositions; Thermal vapor sulfurization; Two-dimensional materials; VAPOR-PHASE GROWTH; ATOMIC LAYER DEPOSITION; DER-WAALS EPITAXY; MOS2; THIN-LAYERS; LARGE-AREA; WAFER-SCALE; HIGH-QUALITY; MONOLAYER MOS2; SINGLE-LAYER; MOLYBDENUM;
D O I
10.1002/cvde.201500060
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The 'self-limiting' character of graphene growth on the surface of metals such as Ni and Cu makes CVD the natural choice for growing large-area and continuous graphene films. Beyond graphene, absence of the self-limiting property results in a challenge to achieving large-area, high-quality two-dimensional (2D) crystals by CVD. Recent studies of structural, optical, and electrical properties of MoS2-based atomic layers grown by CVD are reviewed, concluding that thermal vapor deposition will outperform thermal vapor sulfurization in producing the required materials. Whether gaseous sources will replace the now dominant solid sources in direct deposition methods is an open issue. The latest progression in various CVD techniques used in MoS2 growth and their resultant products are discussed and compared.
引用
收藏
页码:241 / 259
页数:19
相关论文
共 79 条
[1]  
[Anonymous], 2010, PHYS REV LETT
[2]  
[Anonymous], ARXIV14050129
[3]   Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene [J].
Butler, Sheneve Z. ;
Hollen, Shawna M. ;
Cao, Linyou ;
Cui, Yi ;
Gupta, Jay A. ;
Gutierrez, Humberto R. ;
Heinz, Tony F. ;
Hong, Seung Sae ;
Huang, Jiaxing ;
Ismach, Ariel F. ;
Johnston-Halperin, Ezekiel ;
Kuno, Masaru ;
Plashnitsa, Vladimir V. ;
Robinson, Richard D. ;
Ruoff, Rodney S. ;
Salahuddin, Sayeef ;
Shan, Jie ;
Shi, Li ;
Spencer, Michael G. ;
Terrones, Mauricio ;
Windl, Wolfgang ;
Goldberger, Joshua E. .
ACS NANO, 2013, 7 (04) :2898-2926
[4]   Optical identification of atomically thin dichalcogenide crystals [J].
Castellanos-Gomez, A. ;
Agrait, N. ;
Rubio-Bollinger, G. .
APPLIED PHYSICS LETTERS, 2010, 96 (21)
[5]  
Chhowalla M, 2013, NAT CHEM, V5, P263, DOI [10.1038/NCHEM.1589, 10.1038/nchem.1589]
[6]   High Performance Multilayer MoS2 Transistors with Scandium Contacts [J].
Das, Saptarshi ;
Chen, Hong-Yan ;
Penumatcha, Ashish Verma ;
Appenzeller, Joerg .
NANO LETTERS, 2013, 13 (01) :100-105
[7]   Kinetic versus thermodynamic control over growth process of electrodeposited Bi/BiSb superlattice nanowires [J].
Dou, Xincun ;
Li, Guanghai ;
Lei, Hechang .
NANO LETTERS, 2008, 8 (05) :1286-1290
[8]   Large-Area Epitaxial Mono layer MoS2 [J].
Dumcenco, Dumitru ;
Ovchinnikov, Dmitry ;
Marinov, Kolyo ;
Lazic, Predrag ;
Gibertini, Marco ;
Marzari, Nicola ;
Sanchez, Oriol Lopez ;
Kung, Yen-Cheng ;
Krasnozhon, Daria ;
Chen, Ming-Wei ;
Bertolazzi, Simone ;
Gillet, Philippe ;
Fontcuberta i Morral, Anna ;
Radenovic, Aleksandra ;
Kis, Andras .
ACS NANO, 2015, 9 (04) :4611-4620
[9]   Controlled Synthesis and Transfer of Large-Area WS2 Sheets: From Single Layer to Few Layers [J].
Elias, Ana Laura ;
Perea-Lopez, Nestor ;
Castro-Beltran, Andres ;
Berkdemir, Ayse ;
Lv, Ruitao ;
Feng, Simin ;
Long, Aaron D. ;
Hayashi, Takuya ;
Kim, Yoong Ahm ;
Endo, Morinobu ;
Gutierrez, Humberto R. ;
Pradhan, Nihar R. ;
Balicas, Luis ;
Mallouk, Thomas E. ;
Lopez-Urias, Fiorentino ;
Terrones, Humberto ;
Terrones, Mauricio .
ACS NANO, 2013, 7 (06) :5235-5242
[10]   HIGH-RATE, GAS-PHASE GROWTH OF MOS2 NESTED INORGANIC FULLERENES AND NANOTUBES [J].
FELDMAN, Y ;
WASSERMAN, E ;
SROLOVITZ, DJ ;
TENNE, R .
SCIENCE, 1995, 267 (5195) :222-225