Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices

被引：30

作者：

Chu, L. K. ^{[2
]}

Lin, T. D. ^{[2
]}

Huang, M. L. ^{[2
]}

Chu, R. L. ^{[2
]}

Chang, C. C. ^{[2
]}

Kwo, J. ^{[1
]}

Hong, M. ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 20期

关键词：

aluminium compounds; conduction bands; electron energy loss spectra; gadolinium compounds; gallium compounds; germanium; MIS devices; MOSFET; thermodynamics; tunnelling; valence bands; X-ray photoelectron spectra; PASSIVATION; DIELECTRICS; GERMANIUM; SI; PERFORMANCE; FILMS;

D O I：

10.1063/1.3139772

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ga2O3(Gd2O3) (GGO) directly deposited on Ge substrate in ultrahigh vacuum, without a passivation layer such as GeOxNy or Si, has demonstrated excellent electrical performances and thermodynamic stability. Energy-band parameters of GGO/Ge have been determined by in situ x-ray photoelectron spectroscopy in conjunction with reflection electron energy loss spectroscopy and current transport of Fowler-Nordheim tunneling. A conduction-band offset and a valence-band offset of similar to 2.3 and similar to 2.42 eV, respectively, have been obtained. Moreover, self-aligned Ge pMOSFETs of 1-mu m-gate length using Al2O3/GGO as the gate dielectrics have shown a high drain current and a peak transconductance of 252 mA/mm, and 143 mS/mm, respectively.

引用

页数：3

共 23 条

[1] Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators [J].

Afanas'ev, VV ;

Shamuilia, S ;

Stesmans, A ;

Dimoulas, A ;

Panayiotatos, Y ;

Sotiropoulos, A ;

Houssa, M ;

Brunco, DP .

APPLIED PHYSICS LETTERS, 2006, 88 (13)

[2] The impact of device scaling and power supply change on CMOS gate performance [J].

Chen, K ;

Wann, HC ;

Ko, PK ;

Hu, CM .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (05) :202-204

[3] Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge [J].

Chu, L. K. ;

Lee, W. C. ;

Huang, M. L. ;

Chang, Y. H. ;

Tung, L. T. ;

Chang, C. C. ;

Lee, Y. J. ;

Kwo, J. ;

Hong, M. .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) :2195-2198

[4] Nanoscale germanium MOS dielectrics - Part I: Germanium oxynitrides [J].

Chui, Chi On ;

Ito, Fumitoshi ;

Saraswat, Krishna C. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (07) :1501-1508

[5] Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates [J].

Currie, MT ;

Leitz, CW ;

Langdo, TA ;

Taraschi, G ;

Fitzgerald, EA ;

Antoniadis, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06) :2268-2279

[6] Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-insulator substrates [J].

De Jaeger, B ;

Bonzom, R ;

Leys, F ;

Richard, O ;

Van Steenbergen, J ;

Winderickx, G ;

Van Moorhem, E ;

Raskin, G ;

Letertre, F ;

Billon, T ;

Meuris, M ;

Heyns, M .

MICROELECTRONIC ENGINEERING, 2005, 80 :26-29

[7]

ELSHOCHT SV, 2004, APPL PHYS LETT, V85, P3824

[8] Characteristics of Ga2O3(Gd2O3)/GaAs interface:: Structures and compositions [J].

Hong, M ;

Kortan, AR ;

Kwo, J ;

Mannaerts, JP ;

Krajewski, JJ ;

Lu, ZH ;

Hsieh, KC ;

Cheng, KY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1688-1691

[9] Energy-band parameters of atomic-layer-deposition Al2O3/InGaAs heterostructure [J].

Huang, M. L. ;

Chang, Y. C. ;

Chang, C. H. ;

Lin, T. D. ;

Kwo, J. ;

Wu, T. B. ;

Hong, M. .

APPLIED PHYSICS LETTERS, 2006, 89 (01)

[10] Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1-xAs [J].

Huang, M. L. ;

Chang, Y. C. ;

Chang, Y. H. ;

Lin, T. D. ;

Kwo, J. ;

Hong, M. .

APPLIED PHYSICS LETTERS, 2009, 94 (05)

← 1 2 3 →