Rapid recrystallization of amorphous silicon utilizing very-high-frequency microplasma jet at atmospheric pressure

被引：10
|
作者：
Ryo, Mina
Sakurai, Yusuke
Kobayashi, Tomohiro
Shirai, Hajime
机构：
[1] Saitama Univ, Grad Sch Sci & Technol, Dept Phys & Funct Mat Sci, Sakura, Saitama 3388570, Japan
[2] Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 10B期
关键词：
plasma annealing; thin film transistor; silicon; thin film solar cells;
D O I：
10.1143/JJAP.45.8484
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The rapid recrystallization of amorphous silicon (a-Si) utilizing a very-high-frequency(VHF) plasma jet of argon (Ar) at atmospheric pressure is investigated. A highly crystallized polycrystalline Si film is synthesized by optimizing the translating velocity of the substrate stage and the flow rate of argon. The temperature of the plasma exposure area reaches 1350 300 degrees C and the recrystallization of a-Si proceeded with time constants of 30-50ms. The effects of the translating velocity of the substrate stage and the flow rate of argon on the rapid recrystallization of a-Si are demonstrated along with its mechanism.
引用
收藏
页码：8484 / 8487
页数：4
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