Photoelectric and X-ray dosimetric properties of TlGa0.97Mn0.03S2 single crystals

被引：3

作者：

Mustafaeva, S. N. ^{[1
]}

机构：

[1] Natl Acad Sci Azerbaijan, Inst Phys, Baku, Azerbaijan

来源：

INORGANIC MATERIALS | 2009年 / 45卷 / 06期

关键词：

Gallium; Dose Rate; Azerbaijan; Partial Substitution; Photon Energy Range;

D O I：

10.1134/S0020168509060041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is established that the partial substitution of gallium for manganese (3 mol %) in TlGaS2 single crystals leads to a decrease in width of the band gap (from 2.62 to 2.5 eV), broadening of the peak of intrinsic photocurrent, and appearance of a broad band of extrinsic photocurrent over the photon energy range h nu = 1.7-2.4 eV. Upon the partial substitution Ga -> Mn in TlGaS2, the X-ray sensitivity coefficient increases significantly (by a factor of 24-57) within an irradiation dose of 0.75-78 R/min, and the current-dose characteristics of TlGa0.97Mn0.03S2 have good reproducibility.

引用

页码：602 / 605

页数：4