Ferroelectric Properties and Microstructures of Bi4-x LuxTi3O12 Thin Films

被引：1

作者：

Chen, M. ^{[1
]}

Mei, X. A. ^{[1
]}

Liu, J. ^{[1
]}

机构：

[1] Hunan Inst Sci & Technol, Sch Phys & Elect, Yueyang, Peoples R China

来源：

DIANCHI ADVANCED MATERIALS FORUM 2013 | 2014年 / 833卷

关键词：

Ferroelectric; Dielectric; Bismuth Titanate; Films; BISMUTH TITANATE; CAPACITORS;

D O I：

10.4028/www.scientific.net/AMR.833.33

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lu2O3-doped bismuth titanate (Bi4LuxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by if magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Lu-doping into BIT caused a large shift of the Curie temperature (T-C) from 675 degrees C to lower temperature and a improvement in dielectric property. The experimental results indicated that Lu doping into BIT also result in a remarkable improvement in ferroelectric property. The P-r and the E-c values of the BLT film with x=0.75 were 28 mu C/cm(2) and 65 kV/cm, respectively.

引用

页码：33 / 36

页数：4

共 11 条

[1]

Chen M, 2004, CHINESE PHYS LETT, V21, P1811, DOI 10.1088/0256-307X/21/9/038

[2] Fatigue-free samarium-modified bismuth titanate (Bi4-xSmxTi3O12) film capacitors having large spontaneous polarizations [J].

Chon, U ;

Kim, KB ;

Jang, HM ;

Yi, GC .

APPLIED PHYSICS LETTERS, 2001, 79 (19) :3137-3139

[3] FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].

DEARAUJO, CAP ;

CUCHIARO, JD ;

MCMILLAN, LD ;

SCOTT, MC ;

SCOTT, JF .

NATURE, 1995, 374 (6523) :627-629

[4] Synthesis and ferroelectric properties of c-axis oriented Bi4Ti3O12 thin films by sol-gel process on platinum coated silicon [J].

Gu, HS ;

Kuang, AX ;

Wang, SM ;

Bao, DH ;

Wang, LS ;

Liu, JS ;

Li, XJ .

APPLIED PHYSICS LETTERS, 1996, 68 (09) :1209-1210

[5] Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition [J].

Kojima, T ;

Sakai, T ;

Watanabe, T ;

Funakubo, H ;

Saito, K ;

Osada, M .

APPLIED PHYSICS LETTERS, 2002, 80 (15) :2746-2748

[6] Orientation behavior and ferro- and piezoelectric properties of Bi4-xPrxTi3O12 polycrystalline films [J].

Matsuda, H ;

Ito, S ;

Iijima, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (9B) :5977-5980

[7] Lanthanum-substituted bismuth titanate for use in non-volatile memories [J].

Park, BH ;

Kang, BS ;

Bu, SD ;

Noh, TW ;

Lee, J ;

Jo, W .

NATURE, 1999, 401 (6754) :682-684

[8] FERROELECTRIC MEMORIES [J].

SCOTT, JF ;

DEARAUJO, CAP .

SCIENCE, 1989, 246 (4936) :1400-1405

[9] Properties of tungsten-doped Bi4Ti3O12-SrBi4Ti4O15 intergrowth ferroelectrics [J].

Wang, Wei ;

Zhu, Jun ;

Mao, Xiang-Yu ;

Chen, Xiao-Bing .

MATERIALS RESEARCH BULLETIN, 2007, 42 (02) :274-280

[10] Dielectric characterization of Bi3.25La0.75Ti3O12 thin films [J].

Wu, D ;

Li, AD ;

Ming, NB .

APPLIED PHYSICS LETTERS, 2004, 84 (22) :4505-4507

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