Growth of a Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition

被引：9

作者：

Kil, Yeon-Ho ^{[1
,2
]}

Yang, Jong-Han ^{[1
,2
]}

Kang, Sukill ^{[3
]}

Kim, Dae-Jung ^{[4
]}

Jeong, Tae Soo ^{[1
]}

Choi, Chel-Jong ^{[1
,2
]}

Kim, Taek Sung ^{[1
]}

Shim, Kyu-Hwan ^{[1
,2
]}

机构：

[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Jeonju 561756, South Korea

[2] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

[3] Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea

[4] Hanbat Natl Univ, Div Liberal Arts, Taejon 305719, South Korea

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2014年 / 21卷

基金：

新加坡国家研究基金会;

关键词：

Growth; RTCVD; Ge layer; HR-XRD; AFM; TEM; EPD; Raman; Photocurrent; N-TYPE GE; TEMPERATURE-DEPENDENCE; RAMAN-SPECTROSCOPY; QUALITY; ENHANCEMENT; SEGREGATION; SI(100); GAP;

D O I：

10.1016/j.mssp.2014.01.038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have made the successful growth of Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition (RTCVD). In order to overcome the large lattice mismatch between Ge and Si, we used a two-step growth method. Our method shows the uniformity of the thickness and good quality Ge layer with a homogeneous distribution of tensile strain and a lower etch pit density (EPD) in order of 10(5) cm(-2). The surface morphology is very smooth and the root mean square (RMS) of the surface roughness was 0.27 nm. The photocurrent spectra were dominated by the Ge layer related transition that corresponding to the transitions of the Si and Ge. The roll-off in photocurrent spectra beyond 1600 nm is expected due to the decreased absorption of Ge. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：58 / 65

页数：8

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