Development of silicon-on-insulator waveguide technology

被引：6
|
作者：
Aalto, T [1 ]
Harjanne, M [1 ]
Kapulainen, M [1 ]
Heimala, P [1 ]
Leppihalme, M [1 ]
机构：
[1] VTT Informat Technol, Microelect, FIN-02044 Espoo, VTT, Finland
来源：
INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES VIII | 2004年 / 5355卷
关键词：
silicon-on insulator; SOI; waveguide; ridge waveguide; thermo-optical switch; polarization; extinction ratio; birefringence;
D O I：
10.1117/12.537540
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
An overview of the present silicon-on-insulator (SOI) waveguide technology is given and supplemented with an extensive set of theory and simulation results. Characteristics of slab-, rectangular- and ridge waveguides in SOI are explained. In particular, the number of modes and the single-mode conditions are carefully analyzed. Experimental work with straight and bent 8 to 10 mum thick SOI ridge waveguides and a very fast thermo-optical switch are reported. Propagation loss in a very long spiral waveguide down to 0.3 dB/cm, waveguide birefringence below 10(-4), and a switching frequency up to 167 kHz were obtained. A very promising multi-step patterning principle for SOI waveguides is described together with many practical application examples.
引用
收藏
页码：81 / 95
页数：15
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