A numerical approach to incorporate intrinsic material defects in micromagnetic simulations

被引：35

作者：

Leliaert, J. ^{[1
,2
]}

Van de Wiele, B. ^{[1
]}

Vansteenkiste, A. ^{[2
]}

Laurson, L. ^{[3
]}

Durin, G. ^{[4
,5
]}

Dupre, L. ^{[1
]}

Van Waeyenberge, B. ^{[2
]}

机构：

[1] Univ Ghent, Dept Elect Energy Syst & Automat, B-9000 Ghent, Belgium

[2] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium

[3] Aalto Univ, Dept Appl Phys, COMP Ctr Excellence, Aalto 00076, Finland

[4] Ist Nazl Ric Metrol, I-10135 Turin, Italy

[5] ISI Fdn, I-10126 Turin, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 17期

基金：

芬兰科学院;

关键词：

11;

D O I：

10.1063/1.4854956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spintronics devices like racetrack memory rely on the controlled movement of domain walls in magnetic nanowires. The effects of distributed disorder on this movement have not yet been studied extensively. Defects give rise to a pinning potential that can be characterized in terms of a depth and an interaction range. We investigate how the effects of defects can be realistically introduced in micromagnetic simulations by comparing the properties of the pinning potential to experimental results in the literature. We show that the full 3-dimensional simulations can be replaced by equivalent 2-dimensional ones and propose two approaches to include defects. (C) 2014 AIP Publishing LLC.

引用

页数：3

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