Minority-carrier lifetime and efficiency of Cu(In,Ga)Se2 solar cells

被引：117

作者：

Ohnesorge, B ^{[1
]}

Weigand, R

Bacher, G

Forchel, A

Riedl, W

Karg, FH

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

[2] Siemens AG, Corp Res & Dev, D-80807 Munich, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 09期

关键词：

D O I：

10.1063/1.122134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature recombination dynamics has been investigated in a large set of different Cu(In,Ga)Se-2 absorber films and compared to the electrical device characteristics of the respective solar cell modules. For a given cell preparation process, a characteristic relation between the low-injection minority-carrier lifetime of the absorber layers and the conversion efficiency of the solar cells is observed: Long lifetimes correlate with high open circuit voltages and conversion efficiencies, while no significant influence of the lifetime on the short circuit current is found. (C) 1998 American Institute of Physics. [S0003-6951(98)01635-0].

引用

页码：1224 / 1226

页数：3

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