Miniaturized 40-60 GHz On-Chip Balun With Capacitive Loading Compensation

被引：14
|
作者：
Ma, Kaixue [1 ,2 ]
Yan, Ningning [2 ]
Yeo, Kiat Seng [1 ]
Lim, Wei Meng [1 ]
机构：
[1] Nanyang Technol Univ, EEE Sch, Singapore 639798, Singapore
[2] Univ Elect Sci & Technol China, Chengdu 610054, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 04期
关键词：
SiGe BiCMOS; millimeter-wave; balun; multilayer; RFIC; pattern ground; capacitive loading compensation (CLC); ELECTRICAL ISOLATION; CURRENT COLLAPSE; GAN; CARBON;
D O I：
10.1109/LED.2014.2304612
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A millimeter-wave balun by using the broadside-coupled transmission lines and capacitive loading compensation is proposed and investigated. The balun is designed and verified by using a commercial SiGe BiCMOS technology. The measured results show that in the frequency range of 40-60 GHz, the amplitude mismatching and absolute phase error are less than 0.2 dB and 2.7 degrees, respectively. The compact size of the balun is only 200 mu m x 180 mu m including grounding shield.
引用
收藏
页码：434 / 445
页数：12
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