Analytic Model for Undoped Symmetric Double-Gate MOSFETs With Small Gate-Oxide-Thickness Asymmetry

被引：5

作者：

Chang, Sheng ^{[1
,2
]}

Wang, Gaofeng ^{[1
,2
]}

Huang, Qijun ^{[1
,2
]}

Wang, Hao ^{[1
,2
]}

机构：

[1] Wuhan Univ, Sch Phys Sci & Technol, Wuhan 430072, Peoples R China

[2] Wuhan Univ, Inst Microelect & Informat Technol, Wuhan 430072, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 10期

基金：

中国国家自然科学基金;

关键词：

Analytic solution; gate-oxide-thickness asymmetry; surface potential; double-gate (DG) MOSFET;

D O I：

10.1109/TED.2009.2028379

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an analytic model for undoped symmetric double-gate MOSFETs with small gate-oxide-thickness asymmetry is presented by virtue of a perturbation approach. Various effects on the MOSFET performance caused by small asymmetric departure from the nominal gate oxide thickness due to process variations and uncertainties are studied. This analytic solution can be used in compact models for IC designs.

引用

页码：2297 / 2301

页数：5

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