Nanoindentation Behaviour and Microstructural Evolution of Au/Cr/Si Thin Films

被引:4
作者
Lee, Woei-Shyan [1 ,2 ]
Liu, Te-Yu [1 ]
Chen, Tao-Hsing [2 ]
机构
[1] Natl Cheng Kung Univ, Dept Mech Engn, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 701, Taiwan
关键词
gold/chromium/silicon thin films; nanoindentation; silicidation; amorphisation; annealing; INDUCED PHASE-TRANSFORMATION; SINGLE-CRYSTAL SILICON; MECHANICAL CHARACTERIZATION; CONTACT AREA; INDENTATION; STIFFNESS; TEM;
D O I
10.2320/matertrans.MRA2008385
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The nano-mechanical properties of an as-deposited composite Au/Cr/Si film comprising a An layer with a thickness of 800 nm and a Cr adhesive layer with a thickness of 10nm deposited on a Si (100) substrate are investigated by performing nanoindentation tests to a maximum depth of 1500 nm. The microstructural evolutions of as-deposited indented specimens and specimens annealed at temperatures of 523 K, 623 K or 723 K for 2 min are then examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques. The loading curve for the as-deposited Au/Cr/Si thin film is found to be continuous and smooth. However, the unloading curve has a prominent pop-out feature. The hardness and Young's modulus of the Au/Cr/Si thin film indented to a maximum depth of 1500 nm are determined to be 2.7 GPa and 110 GPa, respectively. In the as-deposited sample, the microstructure of the indentation zone is characterised by a mixed structure comprising amorphous phase and nanocrystalline phase. Furthermore, well-defined Au, Cr and Si layers are observed in the interfacial region of the thin film. However, at the highest annealing temperature of 723 K, the microstructure of the indentation zone is recovered to a perfect diamond cubic single crystalline state. Finally, silicidation of the Cr layer takes place in all the annealed samples, resulting in the formation of isolated nano-islands of Cr. [doi: 10.2320/matertrans.MRA2008385]
引用
收藏
页码:1768 / 1777
页数:10
相关论文
共 20 条
  • [1] Eutectic reaction of gold thin-films deposited on silicon surface
    Adachi, T
    [J]. SURFACE SCIENCE, 2002, 506 (03) : 305 - 312
  • [2] Application of composite hardness models to copper thin film hardness measurement
    Beegan, D
    Laugier, MT
    [J]. SURFACE & COATINGS TECHNOLOGY, 2005, 199 (01) : 32 - 37
  • [3] Micromechanical and tribological characterization of doped single-crystal silicon and polysilicon films for microelectromechanical systems devices
    Bhushan, B
    Li, XD
    [J]. JOURNAL OF MATERIALS RESEARCH, 1997, 12 (01) : 54 - 63
  • [4] Interfacial reaction of eutectic AuSi solder with Si (100) and Si (111) surfaces
    Jang, JW
    Hayes, S
    Lin, JK
    Frear, DR
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) : 6077 - 6081
  • [5] Method to account for true contact area in soda-lime glass during nanoindentation with the Berkovich tip
    Kese, KO
    Li, ZC
    Bergman, B
    [J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2005, 404 (1-2): : 1 - 8
  • [6] Novel method for TEM characterization of deformation under nanoindents in nanolayered materials
    Kramer, DE
    Savage, MF
    Lin, A
    Foecke, T
    [J]. SCRIPTA MATERIALIA, 2004, 50 (06) : 745 - 749
  • [7] LEISTNER AJ, 2003, P INT SOC OPTICAL EN, P215
  • [8] Mechanical characterization of micro/nanoscale structures for MEMS/NEMS applications using nanoindentation techniques
    Li, XD
    Bhushan, B
    Takashima, K
    Baek, CW
    Kim, YK
    [J]. ULTRAMICROSCOPY, 2003, 97 (1-4) : 481 - 494
  • [9] Li XD, 2002, MATER CHARACT, V48, P11, DOI 10.1016/S1044-5803(02)00192-4
  • [10] TEM study of metallic contacts to nanostructured silicon
    Martín-Palma, RJ
    Herrero, P
    Martínez-Duart, JM
    [J]. NANOSTRUCTURED MATERIALS, 1999, 11 (05): : 631 - 635