Octonary Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions

被引：24

作者：

Yin, Yue-Wei ^{[1
,2
]}

Huang, Wei-Chuan ^{[1
]}

Liu, Yu-Kuai ^{[1
]}

Yang, Sheng-Wei ^{[1
]}

Dong, Si-Ning ^{[1
]}

Tao, Jing ^{[3
]}

Zhu, Yi-Mei ^{[3
]}

Li, Qi ^{[2
]}

Li, Xiao-Guang ^{[1
,4
]}

机构：

[1] Univ Sci & Technol China, Dept Phys, Hefei Natl Lab Phys Sci Microscale, Hefe 230026, Peoples R China

[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[3] Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USA

[4] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

ADVANCED ELECTRONIC MATERIALS | 2015年 / 1卷 / 11期

基金：

美国国家科学基金会;

关键词：

LA0.67SR0.33MNO3; THIN-FILMS; FERROELECTRIC CONTROL; MAGNETIC-ANISOTROPY; SPIN POLARIZATION; ROOM-TEMPERATURE; MAGNETORESISTANCE; ELECTRORESISTANCE; HETEROSTRUCTURES; INTERFACE; MEMRISTOR;

D O I：

10.1002/aelm.201500183

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

General drawbacks of current electronic/spintronic devices are high power consumption and low density storage. A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents four resistance states in a single device and therefore provides an alternative way to achieve high density memories. Here, an MFTJ device with eight nonvolatile resistance states by further integrating the design of noncollinear magnetization alignments between the ferromagnetic layers is demonstrated. Through the angle-resolved tunneling magnetoresistance investigations on La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 junctions, it is found that, besides collinear parallel/antiparallel magnetic configurations, the MFTJ shows at least two other stable noncollinear (45 degrees and 90 degrees) magnetic confi gurations. Combining the tunneling electroresistance effect caused by the ferroelectricity reversal of the BaTiO3 barrier, an octonary memory device is obtained, representing potential applications in high density nonvolatile storage in the future.

引用

页数：7

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