The disorder effect on the electron and positron structure in the semiconductor alloy InxGa1-xSb

被引：14
作者：
Bouarissa, N
Aourag, H
机构：
来源：
SOLID STATE COMMUNICATIONS | 1997年 / 101卷 / 03期
关键词：
D O I：
10.1016/S0038-1098(96)00754-5
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have obtained the electron and positron band structure and charge densities in InxGa1-xSb from wavefunctions derived in a model pseudo-potential bandstructure calculation coupled with the virtual-crystal approximation which incorporates compositional disorder as an effective potential. We find that the electron is more sensitive to the method used than the positron. The results are used to analyze the dependence of the positron effect in semiconductor alloys. Copyright (C) 1996 Elsevier Science Ltd
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页码：205 / 210
页数：6
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