1.3-μm GaNAsSbGaAs UTC-Photodetectors for 10-Gigabit Ethernet Links

被引：6

作者：

Fedderwitz, S. ^{[1
]}

Stoehr, A. ^{[1
]}

Tan, K. H. ^{[2
]}

Yoon, S. F. ^{[2
]}

Weiss, M. ^{[1
]}

Poloczek, A. ^{[1
]}

Loke, W. K. ^{[2
]}

Wicaksono, S. ^{[2
]}

Ng, T. K. ^{[2
]}

Rymanov, V. ^{[1
]}

Patra, A. ^{[1
]}

Tangdiongga, E. ^{[3
]}

Jaeger, D. ^{[1
]}

机构：

[1] Univ Duisburg Essen, ZHO, D-47057 Duisburg, Germany

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[3] Eindhoven Univ Technol, Fac Elect Engn, NL-5612AZ Eindhoven, Netherlands

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 13期

关键词：

Dilute-nitride-based photodetectors (PDs); fiber-optic transmission; 1,3-mu m photodetectors (PDs);

D O I：

10.1109/LPT.2009.2020302

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on 10-Gigabit Ethernet (IEEE 802.3ae) fiber-optic transmission at 1.3-mu m wavelengh utilizing high-speed GaNAsSb uni-travelling-carrier photodetectors (PDs) grown on GaAs substrate. With an optical bandgap of similar to 0.88 eV, the PDs are suitable for near-infrared operation up to wavelengths of about 1380 nm. The dc responsivity and 3-dB cut-off frequency of the non-antireflection- coated PD at 1.3-mu m wavelength are 0.35 A/W and 14 GHz, respectively. Using this GaAs-based GaNAsSb PD, an error-free (bit-error rate = 10(-12)) transmission of 10-Gb Ethernet data at 1.3-mu m wavelength is successfully demonstrated.

引用

页码：911 / 913

页数：3

共 12 条

[1] Study of interdiffusion in GaAsSbN/GaAs quantum well structure by ten-band k•p method -: art. no. 026102 [J].