m-Plane GaN Films Grown on Patterned a-Plane Sapphire Substrates with 3-inch Diameter

被引：28

作者：

Okuno, Koji ^{[1
]}

Saito, Yoshiki ^{[1
]}

Boyama, Shinya ^{[1
]}

Nakada, Naoyuki ^{[1
]}

Nitta, Shugo ^{[1
]}

Tohmon, Ryoichi George ^{[1
]}

Ushida, Yasuhisa ^{[1
]}

Shibata, Naoki ^{[1
]}

机构：

[1] Toyoda Gosei Co Ltd, Aichi 4901312, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 03期

关键词：

D O I：

10.1143/APEX.2.031002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonpolar m-plane GaN films have been grown by metalorganic vapor-phase epitaxy on patterned a-plane sapphire substrates (diameter: 3 in.) without dielectric masks made of materials such as SiO(2). The m-plane GaN layer had a smooth and transparent surface over the entire area of the substrate. Furthermore, the epitaxial relationships between the m-plane GaN film and the patterned a-plane sapphire substrate were as follows: [0001](GaN) parallel to [0001](Sapphire) and [11 (2) over bar0](GaN) parallel to [10 (1) over bar0](Sapphire). The full width at half maximum values of the X-ray rocking curves for (10 (1) over bar0) GaN along [11 (2) over bar0](GaN) and [0001](GaN) were found to be 396 and 565 arcsec, respectively. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.031002

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