Thermoelectric properties of p-type LiZnSb: Assessment of ab initio calculations

被引：62

作者：

Toberer, Eric S. ^{[1
]}

May, Andrew F. ^{[1
]}

Scanlon, Cidney J. ^{[1
]}

Snyder, G. Jeffery ^{[1
]}

机构：

[1] CALTECH, Pasadena, CA 91125 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 06期

关键词：

ab initio calculations; carrier density; lithium compounds; semiconductor doping; semiconductor materials; thermoelectricity; zinc compounds; ZINTL PHASE; EFFICIENCY; ENHANCEMENT;

D O I：

10.1063/1.3091267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In response to theoretical calculations on the thermoelectric performance of LiZnSb, we report the pertinent transport properties between room temperature and 523 K. Nominal LiZnSb samples are found to be p-type, with a carrier concentration in the range (4-7)x10(20) cm(-3). The thermoelectric figure of merit (zT) is found to be 0.02-0.08 at 523 K. Analysis of material transport parameters and previously reported ab initio calculations demonstrates that even with optimal doping, p-type LiZnSb is unlikely to achieve zT>0.2 at 523 K. The accuracy of the high zT estimate (zT>2) for n-type compositions from ab initio calculations is discussed within the current synthetic limits.

引用

页数：5

共 25 条

[1] Improved thermoelectric performance in Yb14Mn1-xZnxSb11 by the reduction of spin-disorder scattering [J].