Ambipolar field-effect carrier injections in organic Mott insulators

被引：117

作者：

Hasegawa, T ^{[1
]}

Mattenberger, K

Takeya, J

Batlogg, B

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] AIST, Correlated Electron Res Ctr, Tsukuba, Ibaraki 3058562, Japan

[3] Cent Res Inst Elect Power Ind, Tokyo 2018511, Japan

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.69.245115

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report ambipolar field-effect characteristics observed in metal-insulator-semiconductor field-effect transistor (MISFET) device structures based on organic single crystals of the quasi-one-dimensional (Q1D) Mott-Hubbard insulator (BEDT-TTF)(F(2)TCNQ). The main aspects of the measured field-effect properties are well described by the symmetric-gate FET model, which considers the device symmetry of triode FET structures. The temperature-dependent nonlinear nature in the gated-current-voltage characteristics indicates that the ambipolar field-effect carrier injections are present down to 2 K, where the interface barrier potential between the electrode and the Mott insulator appears to be very similar for hole and electron injections, in sharp contrast to the situation involving band insulators.

引用

页码：245115 / 1

页数：6

共 23 条

[1] Colloquium:: Metallic behavior and related phenomena in two dimensions [J].

Abrahams, E ;

Kravchenko, SV ;

Sarachik, MP .

REVIEWS OF MODERN PHYSICS, 2001, 73 (02) :251-266

[2] Electric field effect in correlated oxide systems [J].

Ahn, CH ;

Triscone, JM ;

Mannhart, J .

NATURE, 2003, 424 (6952) :1015-1018

[3] Mobility of the doped holes and the antiferromagnetic correlations in underdoped high-Tc cuprates -: art. no. 017001 [J].

Ando, Y ;

Lavrov, AN ;

Komiya, S ;

Segawa, K ;

Sun, XF .

PHYSICAL REVIEW LETTERS, 2001, 87 (01) :1-017001

[4] Logic circuits with carbon nanotube transistors [J].

Bachtold, A ;

Hadley, P ;

Nakanishi, T ;

Dekker, C .

SCIENCE, 2001, 294 (5545) :1317-1320

[5]

Carlson E.W., CONDMAT0206217

[6] Organic thin-film transistors: A review of recent advances [J].

Dimitrakopoulos, CD ;

Mascaro, DJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2001, 45 (01) :11-27

[7]

Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO

[8]

2-9

[9] Mixed-stack organic charge-transfer complexes with intercolumnar networks [J].

Hasegawa, T ;

Mochida, T ;

Kondo, R ;

Kagoshima, S ;

Iwasa, Y ;

Akutagawa, T ;

Nakamura, T ;

Saito, G .

PHYSICAL REVIEW B, 2000, 62 (15) :10059-10066

[10] Electronic states and anti-ferromagnetic order in mixed-stack charge-transfer compound (BEDT-TTF)(F(2)TCNQ) [J].

Hasegawa, T ;

Kagoshima, S ;

Mochida, T ;

Sugiura, S ;

Iwasa, Y .

SOLID STATE COMMUNICATIONS, 1997, 103 (08) :489-493

← 1 2 3 →