Ballistic magnetoresistance over 3000% in Ni nanocontacts at room temperature

被引：140

作者：

Chopra, HD ^{[1
]}

Hua, SZ ^{[1
]}

机构：

[1] SUNY Buffalo, Thin Films & Nansynth Lab, Mat Program, Dept Mech & Aerosp Engn, Buffalo, NY 14260 USA

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.66.020403

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports ballistic magnetoresistance (BMR) measurements in Ni nanocontacts made by electrodeposition. BMR in excess of 3000% is observed at room temperature and the observed large values of BMR are obtained in switching fields of only a few hundred oersteds. The results are attributed to spin-dependent electron transport across nanometer sharp domain walls within the nanocontacts.

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页码：1 / 3

页数：3

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