Ballistic magnetoresistance over 3000% in Ni nanocontacts at room temperature

被引：140
作者：
Chopra, HD [1 ]
Hua, SZ [1 ]
机构：
[1] SUNY Buffalo, Thin Films & Nansynth Lab, Mat Program, Dept Mech & Aerosp Engn, Buffalo, NY 14260 USA
来源：
PHYSICAL REVIEW B | 2002年 / 66卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.66.020403
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper reports ballistic magnetoresistance (BMR) measurements in Ni nanocontacts made by electrodeposition. BMR in excess of 3000% is observed at room temperature and the observed large values of BMR are obtained in switching fields of only a few hundred oersteds. The results are attributed to spin-dependent electron transport across nanometer sharp domain walls within the nanocontacts.
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页码：1 / 3
页数：3
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