Martensitic transformation in Ni-Mn-Ga/Si(100) thin films

被引:20
作者
Aseguinolaza, I. R. [1 ,2 ]
Orue, I. [3 ]
Svalov, A. V. [1 ,2 ]
Wilson, K. [4 ]
Muellner, P. [4 ]
Barandiaran, J. M. [1 ,2 ]
Chernenko, V. A. [1 ,2 ,5 ]
机构
[1] BCMaterials, Bilbao 48080, Spain
[2] Univ Basque Country UPV EHU, Bilbao 48080, Spain
[3] Vicerrectorado Invest UPV EHU, SGiker, Leioa 48940, Spain
[4] Boise State Univ, Dept Mat Sci & Engn, Boise, ID 83725 USA
[5] Ikerbasque, Basque Fdn Sci, Bilbao 48011, Spain
基金
美国国家科学基金会;
关键词
Ni-Mn-Ga thin films; Martensitic transformation; Crystal structure; Internal stress; Magnetic anisotropy; NI-MN-GA; SHAPE-MEMORY ALLOYS; NI2MNGA SINGLE-CRYSTALS; MAGNETIC-PROPERTIES; BEHAVIOR; COMPOSITES; PHASE; FABRICATION; ACTUATION; SILICON;
D O I
10.1016/j.tsf.2014.02.056
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ni-Mn-Ga thin films exhibiting a martensitic transformation (MT) overlapping with the Curie temperature have been sputter-deposited onto heated Si/SiNx substrates. The films had a partially oriented polycrystalline structure and the tetragonal 10M-martensitic phase undergoing a reverse MT into cubic austenite between 57 and 156 C. The MT was studied with structural, substrate curvature, magnetic and resistivity methods. The substrate imposed residual stress which changes the sign of the transformation volume strain across MT. The role of the magnetocrystalline anisotropy and its impact on magnetic properties are interpreted in terms of film texture and film stiffness. (C) 2014 Elsevier B. V. All rights reserved.
引用
收藏
页码:449 / 454
页数:6
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