Interaction potential for indium phosphide: a molecular dynamics and first-principles study of the elastic constants, generalized stacking fault and surface energies

被引:41
作者
Branicio, Paulo Sergio [1 ]
Rino, Jose Pedro [2 ]
Gan, Chee Kwan [1 ]
Tsuzuki, Helio [2 ]
机构
[1] Inst High Performance Comp, Mat Theory & Simulat Lab, Singapore 138632, Singapore
[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Paulo, Brazil
基金
巴西圣保罗研究基金会;
关键词
BOND-ORDER POTENTIALS; VIBRATIONAL PROPERTIES; PHASE-TRANSITIONS; THERMAL-EXPANSION; TERSOFF-BRENNER; III-V; PRESSURE; INP; SIMULATION; SILICON;
D O I
10.1088/0953-8984/21/9/095002
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Indium phosphide is investigated using molecular dynamics ( MD) simulations and density-functional theory calculations. MD simulations use a proposed effective interaction potential for InP fitted to a selected experimental dataset of properties. The potential consists of two-and three-body terms that represent atomic-size effects, charge-charge, charge-dipole and dipole-dipole interactions as well as covalent bond bending and stretching. Predictions are made for the elastic constants as a function of density and temperature, the generalized stacking fault energy and the low-index surface energies.
引用
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页数:8
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