Self-catalytic growth and field-emission properties of Ga2O3 nanowires

被引：30

作者：

Sinha, Godhuli ^{[1
]}

Datta, Anuja ^{[1
]}

Panda, Subhendu K. ^{[1
]}

Chavan, Padmakar G. ^{[2
]}

More, Mahendra A. ^{[2
]}

Joag, Dilip S. ^{[2
]}

Patra, Amitava ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 700032, India

[2] Univ Poona, Dept Phys, Ctr Adv Studies Mat Sci & Condensed Matter Phys, Pune 411007, Maharashtra, India

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 18期

关键词：

GALLIUM OXIDE NANOWIRES; VAPOR-PHASE GROWTH; BETA-GA2O3; NANOWIRES; NANOBELTS; ARRAYS; PHOTOLUMINESCENCE; NANOSTRUCTURES; NANORIBBONS;

D O I：

10.1088/0022-3727/42/18/185409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ga2O3 nanowires with very narrow width (similar to 30 nm) were fabricated from precursor gallium metal via a self-catalytic vapour-liquid-solid method using sol-gel derived Ga2O3 thin films as substrates. The morphological evolution of Ga2O3 nanostructures has been analysed by scanning electron microscopy and transmission electron microscopy. The field-emission (FE) properties of Ga2O3 nanowires are recorded and the turn-on field is found to be 1.88V mu m(-1). It is shown from the I-t plot that the emission current remains nearly constant over 2 h at the pre-set current value of 1 mu A. The average emission current at the stabilized value is seen to be fairly constant suggesting that the Ga2O3 nanowires are potentially important for applications in FE based devices.

引用

页数：6

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