Reliability Calculation With Respect to Functional Failures Induced by Radiation in TMR Arm Cortex-M0 Soft-Core Embedded Into SRAM-Based FPGA

被引:24
作者
Benites, Luis A. C. [1 ]
Benevenuti, Fabio [1 ]
de Oliveira, Adria B. [1 ]
Kastensmidt, Fernanda L. [1 ]
Added, Nemitala [2 ]
Aguiar, Vitor A. P. [2 ]
Medina, Nilberto H. [2 ]
Guazzelli, Marcilei A. [3 ]
机构
[1] Univ Fed Rio Grande do Sul, Programa Posgrad Microeletron PGMICRO, BR-91501970 Porto Alegre, RS, Brazil
[2] Univ Sao Paulo, Inst Fis, BR-05508090 Sao Paulo, Brazil
[3] Ctr Univ FEI, Dept Fis, BR-09850901 Sao Bernardo Do Campo, Brazil
关键词
Arm microprocessor; fault injection (FI); field-programmable gate array (FPGA); heavy ion; reliability; soft error; soft processor; triple modular redundancy (TMR); ERRORS; DESIGN;
D O I
10.1109/TNS.2019.2921796
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents comparative results from fault injection (FI) and heavy ions accelerated irradiation on a Xilinx 7 series static RAM (SRAM)-based field-programmable gate array (FPGA) for a soft-core microprocessor mitigated by triple modular redundancy (TMR) with different levels of granularity. The Arm Cortex-M0 soft-core processor executing two software applications is employed as a case study. The TMR implementation is automatically generated from synthesized netlist and includes coarse and fine grain variants. Apart from the TMR mitigation, the configuration memory scrubbing is used as implemented by the engine natively available on Xilinx 7 series FPGAs. Experiments with FI and heavy ions allow analyzing the effectiveness of the automated TMR mitigation combined with memory scrubbing and also to analyze the consistency of reliability metrics from FI and heavy ions. The dynamic cross section of the design was improved up to 4.5 times according to the implemented TMR granularity and when associated with the configuration memory scrubbing.
引用
收藏
页码:1433 / 1440
页数:8
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