Deep Level Photo-Thermal Spectroscopy

被引：0

作者：

Xia, J. ^{[1
]}

Mandelis, A. ^{[1
]}

机构：

[1] Univ Toronto, Ctr Adv Diffus Wave Technol CADIFT, Dept Mech & Ind Engn, Toronto, ON, Canada

来源：

EMERGING TECHNOLOGIES IN NON-DESTRUCTIVE TESTING | 2008年

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A purely optical Deep Level Photo-Thermal Spectroscopy has been developed for the defect-state characterization of semi-insulating (SI) GaAs wafers. The methodology utilizes near infrared sub-bandgap absorption to monitor the thermal emission of traps after an optical filling pulse, and the data can be either digitized in the computer or analyzed in a rate-window manner by a lock-in amplifier. The technique has been applied to a vertical-gradient-freeze grown SI-GaAs wafer, and preliminary fitting results based on the recently developed multiple-level theory are presented.

引用

页码：187 / 192

页数：6

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