Microwave characterization of thin film BST material using a simple measurement technique

被引：9

作者：

Jin, Z ^{[1
]}

Tombak, A ^{[1
]}

Maria, JP ^{[1
]}

Boyette, B ^{[1
]}

Stauf, GT ^{[1
]}

Kingon, AI ^{[1
]}

Mortazawi, A ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年

关键词：

D O I：

10.1109/MWSYM.2002.1011868

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin film barium strontium titanate (BST) in the parallel plate capacitors is characterized at microwave frequencies using a simple measurement technique. Short standards are fabricated on the same wafer as the BST capacitors to remove the parasitics of pads, lines, discontinuities and electrodes. The dielectric constant of the patterned BST thin film in the parallel plate capacitor is found to be frequency Independent up to 10 GHz. The average loss tangent of BST thin film for the sample under test is approximately 0.006 and also found to be frequency independent up to 10 GHz.

引用

页码：1201 / 1204

页数：4

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