Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substrates

被引：26

作者：

Molle, Alessandro ^{[1
]}

Brammertz, Guy ^{[2
]}

Lamagna, Luca ^{[1
]}

Fanciulli, Marco ^{[1
,3
]}

Meuris, Marc ^{[2
]}

Spiga, Sabina ^{[1
]}

机构：

[1] INFM, CNR, Lab Nazl MDM, I-20041 Agrate Brianza Milano, Italy

[2] IMEC VZW, B-3001 Louvain, Belgium

[3] Univ Milano Bicocca, Dipartimento Sci Mat, Milan, Italy

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 02期

关键词：

atomic layer deposition; bonds (chemical); elemental semiconductors; germanium; lanthanum; passivation; semiconductor-insulator boundaries; surface composition; thin films; X-ray photoelectron spectra; zirconium compounds; OXIDATION;

D O I：

10.1063/1.3182734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

La-doped ZrO2 thin films were grown by O-3-based atomic layer deposition on III-V (GaAs,In0.15Ga0.85As) substrates through direct growth and after intercalation of a Ge interface passivation layer. The interface composition was investigated by x-ray photoelectron spectroscopy, revealing a dramatic reduction of semiconductor-oxygen bonding upon Ge passivation. An improved electrical quality of the Ge-passivated interfaces due to the removal of Ga3+ bonding related traps is demonstrated by conductance measurements at various temperatures.

引用

页数：3

共 24 条

[1] Capacitance-Voltage Characterization of GaAs-Oxide Interfaces [J].

Brammertz, G. ;

Lin, H. C. ;

Martens, K. ;

Mercier, D. ;

Merckling, C. ;

Penaud, J. ;

Adelmann, C. ;

Sioncke, S. ;

Wang, W. E. ;

Caymax, M. ;

Meuris, M. ;

Heyns, M. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (12) :H945-H950

[2] The effect of dopants on the dielectric constant of HfO2 and ZrO2 from first principles [J].

Fischer, Dominik ;

Kersch, Alfred .

APPLIED PHYSICS LETTERS, 2008, 92 (01)

[3] Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2x8)/(2x4) [J].

Hale, MJ ;

Yi, SI ;

Sexton, JZ ;

Kummel, AC ;

Passlack, M .

JOURNAL OF CHEMICAL PHYSICS, 2003, 119 (13) :6719-6728

[4] Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation [J].

Hinkle, C. L. ;

Sonnet, A. M. ;

Vogel, E. M. ;

McDonnell, S. ;

Hughes, G. J. ;

Milojevic, M. ;

Lee, B. ;

Aguirre-Tostado, F. S. ;

Choi, K. J. ;

Kim, J. ;

Wallace, R. M. .

APPLIED PHYSICS LETTERS, 2007, 91 (16)

[5] Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning [J].

Hinkle, C. L. ;

Milojevic, M. ;

Brennan, B. ;

Sonnet, A. M. ;

Aguirre-Tostado, F. S. ;

Hughes, G. J. ;

Vogel, E. M. ;

Wallace, R. M. .

APPLIED PHYSICS LETTERS, 2009, 94 (16)

[6] Thermodynamic stability of Ga2O3(Gd2O3)/GaAs interface -: art. no. 191905 [J].

Huang, YL ;

Chang, P ;

Yang, ZK ;

Lee, YJ ;

Lee, HY ;

Liu, HJ ;

Kwo, J ;

Mannaerts, JP ;

Hong, M .

APPLIED PHYSICS LETTERS, 2005, 86 (19) :1-3

[7] Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer [J].

Kim, Hyoung-Sub ;

Ok, Injo ;

Zhang, Manhong ;

Lee, T. ;

Zhu, F. ;

Yu, L. ;

Lee, Jack C. ;

Koveshnikov, S. ;

Tsai, W. ;

Tokranov, V. ;

Yakimov, M. ;

Oktyabrsky, S. .

APPLIED PHYSICS LETTERS, 2006, 89 (22)

[8] Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As [J].

Kobayashi, M. ;

Chen, P. T. ;

Sun, Y. ;

Goel, N. ;

Majhi, P. ;

Garner, M. ;

Tsai, W. ;

Pianetta, P. ;

Nishi, Y. .

APPLIED PHYSICS LETTERS, 2008, 93 (18)

[9] Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAlO3 gate oxide [J].

Koveshnikov, S. ;

Adamo, C. ;

Tokranov, V. ;

Yakimov, M. ;

Kambhampati, R. ;

Warusawithana, M. ;

Schlom, D. G. ;

Tsai, W. ;

Oktyabrsk, S. .

APPLIED PHYSICS LETTERS, 2008, 93 (01)

[10] Ge-interface engineering with ozone oxidation for low interface-state density [J].

Kuzum, Duygu ;

Krishnamohan, Tejas ;

Pethe, Abhijit J. ;

Okyay, Ali K. ;

Oshima, Yasuhiro ;

Sun, Yun ;

McVittie, James P. ;

Pianetta, Piero A. ;

McIntyre, Paul C. ;

Saraswat, Krishna C. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (04) :328-330

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