Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substrates

被引：26

作者：

Molle, Alessandro ^{[1
]}

Brammertz, Guy ^{[2
]}

Lamagna, Luca ^{[1
]}

Fanciulli, Marco ^{[1
,3
]}

Meuris, Marc ^{[2
]}

Spiga, Sabina ^{[1
]}

机构：

[1] INFM, CNR, Lab Nazl MDM, I-20041 Agrate Brianza Milano, Italy

[2] IMEC VZW, B-3001 Louvain, Belgium

[3] Univ Milano Bicocca, Dipartimento Sci Mat, Milan, Italy

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 02期

关键词：

atomic layer deposition; bonds (chemical); elemental semiconductors; germanium; lanthanum; passivation; semiconductor-insulator boundaries; surface composition; thin films; X-ray photoelectron spectra; zirconium compounds; OXIDATION;

D O I：

10.1063/1.3182734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

La-doped ZrO2 thin films were grown by O-3-based atomic layer deposition on III-V (GaAs,In0.15Ga0.85As) substrates through direct growth and after intercalation of a Ge interface passivation layer. The interface composition was investigated by x-ray photoelectron spectroscopy, revealing a dramatic reduction of semiconductor-oxygen bonding upon Ge passivation. An improved electrical quality of the Ge-passivated interfaces due to the removal of Ga3+ bonding related traps is demonstrated by conductance measurements at various temperatures.

引用

页数：3