Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures

被引：3

作者：

Bharathan, Jayesh ^{[1
,3
]}

Zhou, Honghui ^{[2
]}

Narayan, Jagdish ^{[1
]}

Rozgonyi, George ^{[1
]}

Bulman, Gary E. ^{[3
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] Fredrick Seitz Mat Res Lab, Urbana, IL 61801 USA

[3] RTI Int, Engn & Appl Phys Div, Durham, NC 27709 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2014年 / 43卷 / 09期

关键词：

Germanium epitaxy; thermal misfit strain; x-ray diffraction; two-step growth technique; CHEMICAL-VAPOR-DEPOSITION; SEMICONDUCTOR HETEROSTRUCTURES; DISLOCATION NUCLEATION; LATTICE-PARAMETER; LOW-TEMPERATURE; GE EPILAYERS; GERMANIUM; SILICON; GROWTH; FILMS;

D O I：

10.1007/s11664-014-3247-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We used x-ray diffraction and transmission electron microscopy to study the mechanism of thermal misfit strain relaxation in epitaxial Ge films grown on Si(001) substrates by the two-step growth technique. Lattice misfit strain associated with Ge/Si(001)Si mismatched epitaxy is largely relieved by a network of Lomer edge misfit dislocations during the first step of growth. However, thermal misfit strain during growth is relieved primarily by interdiffusion at the Si/Ge heterointerface. Two SiGe compositions containing 0.5 at.% and 6.0 at.% Si detected at the interface relieve thermal mismatch strain associated with the two growth steps. A thermodynamic model has been proposed to explain the state of strain in the films.

引用

页码：3196 / 3203

页数：8

共 50 条

[31] Strain-mediated uniform islands in stacked Ge/Si(001) layers [J].

Xu, MJ ;

Jeyanthinath, M ;

Wang, XS ;

Jia, JF ;

Xue, QK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (11A) :7411-7414

[32] Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si [J].

Gupta, S. ;

Shimura, Y. ;

Richard, O. ;

Douhard, B. ;

Simoen, E. ;

Bender, H. ;

Nakatsuka, O. ;

Zaima, S. ;

Loo, R. ;

Heyns, M. .

APPLIED PHYSICS LETTERS, 2018, 113 (19)

[33] Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy [J].

Luong, T. K. P. ;

Dau, M. T. ;

Zrir, M. A. ;

Stoffel, M. ;

Le Thanh, V. ;

Petit, M. ;

Ghrib, A. ;

El Kurdi, M. ;

Boucaud, P. ;

Rinnert, H. ;

Murota, J. .

JOURNAL OF APPLIED PHYSICS, 2013, 114 (08)

[34] Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique [J].

Shengurov, V. G. ;

Chalkov, V. Yu. ;

Denisov, S. A. ;

Alyabina, N. A. ;

Guseinov, D. V. ;

Trushin, V. N. ;

Gorshkov, A. P. ;

Volkova, N. S. ;

Ivanova, M. M. ;

Kruglov, A. V. ;

Filatov, D. O. .

SEMICONDUCTORS, 2015, 49 (10) :1365-1368

[35] Dislocation density and strain-relaxation in Ge1-xSnx layers grown on Ge/Si (001) by low-temperature molecular beam epitaxy [J].

Khiangte, Krista R. ;

Rathore, Jaswant S. ;

Sharma, Vaibhav ;

Bhunia, Swagata ;

Das, Sudipta ;

Fandan, Rajveer S. ;

Pokharia, Ravinder S. ;

Laha, Apurba ;

Mahapatra, Suddhasatta .

JOURNAL OF CRYSTAL GROWTH, 2017, 470 :135-142

[36] Brittle-plastic relaxation of misfit stresses in the Si(001)/Si1 − xGex system [J].

V. P. Martovitsky ;

V. S. Krivobok .

Journal of Experimental and Theoretical Physics, 2011, 113 :288-305

[37] Strain engineering via amorphization and recrystallization in Si/Ge heterostructures [J].

Park, Yumi ;

Tan, Winnie ;

Strachan, Alejandro .

PHYSICAL REVIEW B, 2011, 84 (12)

[38] Compliant substrate versus plastic relaxation effects in Ge nanoheteroepitaxy on free-standing Si(001) nanopillars [J].

Kozlowski, G. ;

Zaumseil, P. ;

Schubert, M. A. ;

Yamamoto, Y. ;

Bauer, J. ;

Matejova, J. ;

Schulli, T. ;

Tillack, B. ;

Schroeder, T. .

APPLIED PHYSICS LETTERS, 2011, 99 (14)

[39] The effects of low temperature buffer layer on the growth of pure Ge on Si(001) [J].

Shin, Keun Wook ;

Kim, Hyun-Woo ;

Kim, Jungsub ;

Yang, Changjae ;

Lee, Sangsoo ;

Yoon, Euijoon .

THIN SOLID FILMS, 2010, 518 (22) :6496-6499

[40] Control over strain relaxation in Si-based heterostructures [J].

Izyumskaya, NF ;

Avrutin, VS ;

Vyatkin, AF .

SOLID-STATE ELECTRONICS, 2004, 48 (08) :1265-1278

← 1 2 3 4 5 →