Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures

被引：3

作者：

Bharathan, Jayesh ^{[1
,3
]}

Zhou, Honghui ^{[2
]}

Narayan, Jagdish ^{[1
]}

Rozgonyi, George ^{[1
]}

Bulman, Gary E. ^{[3
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] Fredrick Seitz Mat Res Lab, Urbana, IL 61801 USA

[3] RTI Int, Engn & Appl Phys Div, Durham, NC 27709 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2014年 / 43卷 / 09期

关键词：

Germanium epitaxy; thermal misfit strain; x-ray diffraction; two-step growth technique; CHEMICAL-VAPOR-DEPOSITION; SEMICONDUCTOR HETEROSTRUCTURES; DISLOCATION NUCLEATION; LATTICE-PARAMETER; LOW-TEMPERATURE; GE EPILAYERS; GERMANIUM; SILICON; GROWTH; FILMS;

D O I：

10.1007/s11664-014-3247-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We used x-ray diffraction and transmission electron microscopy to study the mechanism of thermal misfit strain relaxation in epitaxial Ge films grown on Si(001) substrates by the two-step growth technique. Lattice misfit strain associated with Ge/Si(001)Si mismatched epitaxy is largely relieved by a network of Lomer edge misfit dislocations during the first step of growth. However, thermal misfit strain during growth is relieved primarily by interdiffusion at the Si/Ge heterointerface. Two SiGe compositions containing 0.5 at.% and 6.0 at.% Si detected at the interface relieve thermal mismatch strain associated with the two growth steps. A thermodynamic model has been proposed to explain the state of strain in the films.

引用

页码：3196 / 3203

页数：8

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