Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers

被引：13

作者：

Li, Haoran ^{[1
]}

Keller, Stacia ^{[1
]}

DenBaars, Steven R. ^{[2
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 09期

基金：

美国国家科学基金会;

关键词：

ELASTIC STRAIN RELAXATION; MISFIT DISLOCATIONS; HETEROSTRUCTURES; HEMTS; POWER; POLARIZATION; MECHANISMS; DEPOSITION; THICKNESS; BARRIER;

D O I：

10.7567/JJAP.53.095504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN cap layers with thicknesses between 0.6 and 2.4 nm were shown to effectively suppress the degradation of the structural and electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) structures with x(Al) similar to 0.5 grown by metal organic chemical vapor deposition (MOCVD). The formation of platelets and trench networks on free AlGaN surfaces was successfully mitigated by GaN cap layers as thin as 0.6 nm. Simultaneously, a rise in sheet charge density and mobility of the two-dimensional electron gas (2DEG) was observed, the magnitude of which depended on the AlGaN thickness. GaN was also shown to be a superior capping material compared to in-situ grown Si3N4. (C) 2014 The Japan Society of Applied Physics

引用

页数：5

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