Sensor photoresponse of thin-film oxides of zinc and titanium to oxygen gas

被引：209

作者：

Golego, N ^{[1
]}

Studenikin, SA ^{[1
]}

Cocivera, M ^{[1
]}

机构：

[1] Univ Guelph, Guelph Waterloo Ctr Grad Work Chem, Guelph, ON N1G 2W1, Canada

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2000年 / 147卷 / 04期

关键词：

D O I：

10.1149/1.1393400

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Response of steady-state photoconductivity to changes in oxygen partial pressure (10(-3) to 1 atm) has been quantitatively studied in thin-film polycrystalline TiO2:Nb and ZnO at 80-120 degrees C. The magnitude of photoconductivity varied as a square root of illumination intensity regardless of oxygen pressure. Both materials showed fast response to oxygen, although in different pressure ranges. Zinc oxide was more sensitive to lower oxygen pressures while titanium dioxide worked better at pressures close to 1 atm. (C) 2000 The Electrochemical Society. S0013-4651(99)07-1 19-0. All rights reserved.

引用

页码：1592 / 1594

页数：3

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