Microscopic theory of hot-carrier relaxation in semiconductor-based quantum-cascade lasers

被引：42
作者：
Iotti, RC
Rossi, F
机构：
[1] Politecn Torino, INFM, I-10129 Turin, Italy
[2] Politecn Torino, Dipartimento Fis, I-10129 Turin, Italy
[3] Scuola Normale Super Pisa, I-56126 Pisa, Italy
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 16期
关键词：
D O I：
10.1063/1.126316
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A microscopic analysis of basic nonequilibrium phenomena in unipolar quantum devices is presented. In particular, energy-relaxation processes governing the hot-carrier dynamics in the active region of GaAs-based quantum-cascade lasers are investigated by means of a generalized ensemble Monte Carlo simulation. Such analysis is essential in determining the validity range and limitations of purely macroscopic models with respect to basic device parameters, like injection current and temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)01516-3].
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页码：2265 / 2267
页数：3
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