Structures of Cu(In,Ga)(S,Se)2 solar cells for minimizing open-circuit voltage deficit: Investigation of carrier recombination rates

被引:17
作者
Chantana, Jakapan [1 ,2 ]
Kato, Takuya [3 ]
Sugimoto, Hiroki [3 ]
Minemoto, Takashi [1 ]
机构
[1] Ritsumeikan Univ, Dept Elect & Elect Engn, 1-1-1 Nojihigashi, Kusatsu, Shiga 5258577, Japan
[2] Ritsumeikan Univ, Res Org Sci & Technol, 1-1-1 Nojihigashi, Kusatsu 5258577, Japan
[3] Solar Frontier KK, Atsugi Res Ctr, Atsugi, Kanagawa 2430206, Japan
来源
PROGRESS IN PHOTOVOLTAICS | 2019年 / 27卷 / 07期
关键词
carrier recombination rate; Cu(In; Ga)(S; Se)(2); device structure; K treatment; open-circuit voltage deficit; solar cell; CONDUCTION-BAND OFFSET; EFFICIENCY; BUFFER; CHALCOPYRITE; ABSORBER; LAYERS; CU(IN;
D O I
10.1002/pip.3137
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Cu(In,Ga)(S,Se)(2) (CIGSSe) solar cell structures are designed to reduce open-circuit voltage deficit (V-OC,V-def) for the enhancement of power conversion efficiency (eta) through the optimizations of conduction band offsets not only between the buffer and absorber (Delta EC-BA) but also between the transparent conductive oxide and absorber (Delta EC-TA). Voltage-independent carrier recombination rates at buffer/absorber interface (R-0(i)), in space-charge region (R-0(d)), and in quasi-neutral region (R-0(b)) of the CIGSSe solar cells with different structures are separately extracted. Consequently, the development of device structures with similar CIGSSe quality leads to the primary reduction of R-0(i), while R-0(d) and R-0(b) are not varied very much, thus minimizing the V-OC,V-def. It is disclosed that the solar cell structure of CIGSSe/Cd0.75Zn0.25S/Zn0.8Mg0.2O/Zn0.9Mg0.1O:Al together with K-treated CIGSSe absorber is appropriate with the Delta EC-BA of 0.31 eV and Delta EC-TA of 0.37 eV, thereby significantly decreasing R-0(i) and V-OC,V-def to approximately 1.1 x 10(4) cm(-2) s(-1) and 0.374 V, respectively, and increasing the eta to 21.1%.
引用
收藏
页码:630 / 639
页数:10
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