Effect of sensor thickness on trimethylamine sensitivity of In2O3-MgO sensors loaded with noble metals

被引：11

作者：

Takao, Y ^{[1
]}

Han, MH ^{[1
]}

Shimizu, Y ^{[1
]}

Egashira, M ^{[1
]}

机构：

[1] NAGASAKI UNIV,FAC ENGN,DEPT MAT SCI & ENGN,NAGASAKI 852,JAPAN

来源：

DENKI KAGAKU | 1996年 / 64卷 / 12期

关键词：

semiconductor gas sensors; sensor thickness; trimethylamine; catalytic activity;

D O I：

10.5796/kogyobutsurikagaku.64.1280

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Variations in trimethylamine (TMA) sensitivity with sensor thickness as well as operating temperature have been investigated with thick film In2O3-MgO (5 mol%)-based sensors with interior electrodes. The sensitivity of pure In2O3-MgO (5 mol%) tended to exhibit a maximum TMA sensitivity at a certain sensor thickness at temperatures lower than 530 degrees C. Loading of 0.5 wt% Pt led to a monotonous decrease in sensitivity with increasing thickness even at a temperature as low as 300 degrees C, and then to a significant decrease in sensitivity. In contrast, the sensitivity enhancement induced by the loading of 0.5 wt% Au remained almost unchanged up to about 2.5 mm thick, especially at temperatures lower than 375 degrees C. Among the sensors tested, the Au-loaded sensor with around 2 mm thick exhibited the highest TMA sensitivity at 300 degrees C.

引用

页码：1280 / 1284

页数：5