Effect of sensor thickness on trimethylamine sensitivity of In2O3-MgO sensors loaded with noble metals

被引:11
作者
Takao, Y [1 ]
Han, MH [1 ]
Shimizu, Y [1 ]
Egashira, M [1 ]
机构
[1] NAGASAKI UNIV,FAC ENGN,DEPT MAT SCI & ENGN,NAGASAKI 852,JAPAN
来源
DENKI KAGAKU | 1996年 / 64卷 / 12期
关键词
semiconductor gas sensors; sensor thickness; trimethylamine; catalytic activity;
D O I
10.5796/kogyobutsurikagaku.64.1280
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Variations in trimethylamine (TMA) sensitivity with sensor thickness as well as operating temperature have been investigated with thick film In2O3-MgO (5 mol%)-based sensors with interior electrodes. The sensitivity of pure In2O3-MgO (5 mol%) tended to exhibit a maximum TMA sensitivity at a certain sensor thickness at temperatures lower than 530 degrees C. Loading of 0.5 wt% Pt led to a monotonous decrease in sensitivity with increasing thickness even at a temperature as low as 300 degrees C, and then to a significant decrease in sensitivity. In contrast, the sensitivity enhancement induced by the loading of 0.5 wt% Au remained almost unchanged up to about 2.5 mm thick, especially at temperatures lower than 375 degrees C. Among the sensors tested, the Au-loaded sensor with around 2 mm thick exhibited the highest TMA sensitivity at 300 degrees C.
引用
收藏
页码:1280 / 1284
页数:5
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