Statistical Metrology of Metal Nanocrystal Memories With 3-D Finite-Element Analysis

被引：9

作者：

Shaw, Jonathan ^{[1
]}

Hou, Tuo-Hung ^{[2
]}

Raza, Hassan ^{[3
]}

Kan, Edwin Chihchuan ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Univ Iowa, Sch Elect & Comp Engn, Iowa City, IA 52242 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 08期

基金：

美国国家科学基金会;

关键词：

Nanocrystal (NC); nonvolatile memories; programming window distribution; 3-D electrostatics; DESIGN OPTIMIZATION; WINDOW;

D O I：

10.1109/TED.2009.2024108

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study the parametrical yield of memory windows for the metal nanocrystal (NC) Flash memories with consideration of the 3-D electrostatics and channel percolation effects. Monte Carlo parametrical variation that accounts for the number and size fluctuations in NCs as well as channel length is used to determine the threshold voltage distribution and bit error rate for gate length scaling to 20 nm. Devices with nanowire-based channels are compared with planar devices having the same gate stack structure. Scalability prediction by 1-D analysis is found to be very different from 3-D modeling due to underestimation of effective NC coverage and failure to consider the 3-D nature of the channel percolation effect.

引用

页码：1729 / 1735

页数：7

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