Comprehensive Study on Chemical Structures of Compositional Transition Layer at SiO2/Si(100) Interface

被引：1

作者：

Suwa, T. ^{[1
]}

Teramoto, A. ^{[1
]}

Muro, T. ^{[2
]}

Kinoshita, T. ^{[2
]}

Sugawa, S. ^{[1
,3
]}

Hattori, T. ^{[1
]}

Ohmi, T. ^{[1
]}

机构：

[1] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan

[2] Japan Synchrotron Radiat Res Inst, Hyogo 6795198, Japan

[3] Tohoku Univ, Grad Sch Engn, Sendai 9808579, Japan

来源：

DIELECTRIC MATERIALS AND METALS FOR NANOELECTRONICS AND PHOTONICS 10 | 2012年 / 50卷 / 04期

关键词：

SI/SIO2; INTERFACE; SURFACE;

D O I：

10.1149/05004.0313ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The angle-resolved Si 2p photoelectron spectra arising from the transition layers formed on both sides of the SiO2/Si(100) interface covered with more than one SiO2 monolayer, which is device grade, were measured with the probing depth of nearly 2 nm. The novel analytical procedure of these spectra is developed by considering that one SiO2 monolayer, two compositional transition layers (CTLs), and one Si monolayer on Si substrate surface are continuously connected with each other. It was found for the interface formed in dry O-2 at 900 degrees C that two CTLs constitute the first and second CTLs. The first CTL formed at the interface consists mainly of Si1+, Si2+, and Si-0 and the second CTL formed on the first CTL consists mainly of Si3+ and Si4+. Influences of oxidation temperature, annealing in forming gas on the chemical structures of transition layers formed on both sides of the interface are also discussed.

引用

页码：313 / 318

页数：6

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