Non-linear model of impurity diffusion in nanoporous materials upon ultrasonic treatment

被引:12
作者
Peleshchak, R. M. [1 ]
Kuzyk, O. V. [1 ]
Dan'kiv, O. O. [1 ]
机构
[1] Drohobych Ivan Franko State Pedag Univ, UA-82100 Drogobych, Ukraine
关键词
diffusion coefficient; ultrasound; vacancy; pore; SILICON;
D O I
10.5488/CMP.17.23601
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Non-linear theory of diffusion of impurities in porous materials upon ultrasonic treatment is described. It is shown that at a defined value of deformation amplitude, an average concentration of vacancies and temperature as a result of the effect of ultrasound possibly leads to the formation of nanoclusters of vacancies and to their periodic educations in porous materials. It is shown that at a temperature smaller than some critical value, a significant growth of a diffusion coefficient is observed in porous materials.
引用
收藏
页数:8
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