Large-area far ultraviolet-C emission of Al0.73Ga0.27N/AlN multiple quantum wells using carbon nanotube based cold cathode electron-beam pumping

被引：6

作者：

Lee, Joohyoung ^{[1
]}

Yoo, Sung Tae ^{[2
]}

So, Byeongchan ^{[1
]}

Park, Kyu Chang ^{[2
]}

Nam, Okhyun ^{[1
]}

机构：

[1] Korea Polytech Univ, Convergence Ctr Adv Nano Semicond CANS, Dept Nano & Semicond Engn, Siheung Si 15073, Gyeonggi Do, South Korea

[2] Kyung Hee Univ, Dept Informat Display, Seoul 02447, South Korea

来源：

THIN SOLID FILMS | 2020年 / 711卷

关键词：

Large-area far ultraviolet-C; Aluminum gallium nitride layer; Carbon nanotube based cold cathod electron-beam; High-temperature metal-organic chemical vapor deposition; ALGAN; INJECTION;

D O I：

10.1016/j.tsf.2020.138292

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, we demonstrated a far ultraviolet-C (far-UVC) emitter using Al0.73Ga0.27N/AlN multiple quantum wells (MQWs) by carbon nanotube based cold cathode electron-beam (C-beam) excitation. The Al0.73Ga0.27N/AlN MQW structure was grown on AlN/sapphire by high-temperature metal-organic chemical vapor deposition. The large-area far-UVC emission (276 mm(2)) was investigated using C-beam, as a function of anode voltage (VA) and anode current (IA), and the near-band-edge emission of Al0.73Ga0.27N/AlN MQWs was observed at a peak wavelength of 233 nm, with a VA of 4 kV, an IA of 0.5 mA. The results suggest that the large-area C-beam pumped far-UVC emitter could be a promising sterilization light source.

引用

页数：6

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