Improvement of On-Off-Current Ratio in TiOx Active-Channel TFTs Using N2O Plasma Treatment

被引：33

作者：

Park, Jae-Woo ^{[1
]}

Lee, Dongyun ^{[1
]}

Kwon, Hakyoung ^{[2
]}

Yoo, Seunghyup ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn & Comp Sci, Taejon 305701, South Korea

[2] ASM GK Ltd, Cheonan Valley 514, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 04期

关键词：

N2O plasma treatment; on-off-current ratio; plasma-enhanced atomic-layer deposition (PEALD); thin-film transistor (TFT); titanium oxide (TiOx);

D O I：

10.1109/LED.2009.2013647

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Without sacrificing the on-current in the transfer characteristics, we have successfully reduced the off-current part by the optimal N2O plasma treatment to improve the on-off-current ratio, in n-type titanium oxide (TiOx) active-channel thin-film transistors. While the high-power (275 W) N2O plasma treatment oxidizes the whole TiOx channel and results in the reduction of both on- and off-current, the optimized low-power (150 W) process makes the selective oxidation of the top portion in the channel and reduces only the off-current significantly. Increase in on-off ratio by almost five orders of magnitude is achieved without change in on-current by using the presented method.

引用

页码：362 / 364

页数：3

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